Loading SEN workspace
Preparing the latest information…
Preparing the latest information…
Select an image, then move the pointer over the large image to inspect details. Tap the large image to toggle zoom on touch devices.
Infineon
Infineon IKW30N65WR5 (K30EWR5) is a 650 V, 30 A reverse-conducting TRENCHSTOP 5 IGBT with an integrated monolithic body diode in a TO-247-3 package.
Final pricing may vary by configuration, quantity, delivery and project requirements.
The Infineon IKW30N65WR5, marked K30EWR5 on the package, is a 650 V reverse-conducting TRENCHSTOP 5 WR5 IGBT with a monolithic body diode. It is designed for efficient high-frequency power switching in PFC, welding, UPS, photovoltaic and home-appliance power stages.
| Manufacturer | Infineon Technologies AG |
|---|---|
| Model Number | IKW30N65WR5 |
| Ordering Part Number | IKW30N65WR5XKSA1 |
| Package Marking | K30EWR5 |
| Component Type | Reverse-conducting IGBT with monolithic body diode |
| Technology | TRENCHSTOP 5 WR5 |
| Collector-Emitter Voltage | 650 V |
| Collector Current at 100°C | 30 A maximum |
| Collector Current at 25°C | 60 A maximum |
| Pulsed Collector Current | 90 A maximum |
| Typical VCE(sat) | 1.4 V at IC = 30 A, VGE = 15 V, 25°C |
| Maximum Junction Temperature | 175°C |
| Switching Frequency Range | 20 kHz to 60 kHz |
| Package | PG-TO247-3 / TO-247-3 |
| Mounting | Through-hole |
The device combines Infineon TRENCHSTOP 5 IGBT technology with an integrated monolithic diode optimized for zero-current-switching applications. Its low typical collector-emitter saturation voltage and low turn-off energy support efficient power conversion and stable thermal behavior.
The integrated diode is adequately rated for the intended converter applications, reducing the need for a separate external antiparallel diode in suitable designs. The positive temperature coefficient of VCE(sat) also supports parallel operation.