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Chinese
Infineon IKW40N65WR5 (marking K40EWR5) is a high-performance 650V 40A TRENCHSTOP™ 5 reverse-conducting IGBT with an integrated monolithic anti-parallel diode. Supplied in a TO-247-3 through-hole package, it is optimized for PFC, welding, ZCS converters, UPS, solar inverter and high-power switching applications.
Final pricing may vary by configuration, quantity, delivery and project requirements.
The Infineon IKW40N65WR5 is a high-speed 650V reverse-conducting IGBT from Infineon's TRENCHSTOP™ 5 WR5 technology family. The device integrates a powerful monolithic anti-parallel/body diode and is supplied in a rugged PG-TO247-3 through-hole power package.
The marking shown on the component, K40EWR5, is the official device marking for the IKW40N65WR5. It is designed for demanding power-conversion applications including PFC stages, welding equipment, ZCS converters, UPS systems and other high-power switching circuits.
| Manufacturer | Infineon Technologies |
| Part Number | IKW40N65WR5 |
| Device Marking | K40EWR5 |
| Device Type | Reverse-Conducting IGBT |
| Technology | TRENCHSTOP™ 5 WR5 |
| Collector-Emitter Voltage | 650V |
| Collector Current at 100°C | 40A |
| Collector Current at 25°C | 80A |
| Pulsed Collector Current | 120A |
| Integrated Diode | Yes – Monolithic Anti-Parallel Diode |
| VCE(sat) | 1.4V |
| Total Power Dissipation | 230W Maximum |
| Gate Charge | 193nC |
| Recommended Switching Range | 20–60kHz |
| Package | PG-TO247-3 / TO-247-3 |
| Mounting Type | Through-Hole |
The IKW40N65WR5 combines a 650V blocking capability with low conduction and switching losses. Infineon specifies a low VCE(sat) of approximately 1.4V, supporting efficient operation in high-power switching circuits.
The WR5 device uses reverse-conducting IGBT technology with an integrated monolithic diode optimized for applications such as zero-current-switching converters. This provides the IGBT and reverse-current path within a single power-semiconductor package.
Infineon positions the TRENCHSTOP™ 5 WR5 technology for switching frequencies in the approximately 20kHz to 60kHz range. Its combination of low VCE(sat), low switching losses and temperature-stable behavior makes it suitable for high-efficiency power conversion.