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Enterprise technology · Energy · Medical · Global sourcingChina → Bangladesh → Worldwide
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Jilin Sino-Microelectronics
Jilin Sino JT010N065CED 650V N-Channel IGBT Transistor – TO-220C
JT010N065CED is a 650 V N-channel trench field-stop IGBT in a TO-220C package with a co-packed diode, low gate charge and a typical 1.5 V saturation voltage at 10 A.
Stock: 0SKU: SEN-JILIN-SINO-MICROELECTRONICS-JT010N065CEDModel: JT010N065CED
BDT 35BDT 39
Final pricing may vary by configuration, quantity, delivery and project requirements.
Product overview
The Jilin Sino-Microelectronics JT010N065CED is a 650 V N-channel IGBT designed for general-purpose inverter and UPS power applications. Its trench field-stop construction combines low gate charge with a typical collector-emitter saturation voltage of 1.5 V at IC=10 A, VGE=15 V and TC=25 °C.
Key specifications
- Device type: N-channel IGBT with co-packed diode
- Package: TO-220C, three leads
- Collector-emitter voltage (VCES): 650 V
- Continuous collector current: 20 A at TC=25 °C; 10 A at TC=100 °C
- Pulsed collector current (ICM): 40 A
- Typical VCE(sat): 1.5 V at IC=10 A, VGE=15 V, TC=25 °C
- Gate-emitter voltage: ±30 V
- Power dissipation: 136 W at TC=25 °C
- Junction temperature range: -55 °C to +175 °C
- RoHS compliant
Applications
- General-purpose inverters
- Uninterruptible power supplies (UPS)