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Toshiba
Toshiba GT60N321 N-Channel IGBT Transistor – 1000V 60A 170W High-Power Switching IGBT with Built-In FRD
Toshiba GT60N321 N-Channel IGBT for high-power switching applications. Rated at 1000V VCES, 60A continuous collector current and 170W power dissipation, with 120A pulsed current capability and an integrated fast-recovery diode (FRD). Toshiba specifies 2.3V typical VCE(sat) at 60A and 0.25µs typical fall time.
Stock: 100SKU: SEN-TOSHIBA-TOSHIBA-GT60N321Model: Toshiba GT60N321
BDT 150BDT 160
Final pricing may vary by configuration, quantity, delivery and project requirements.
Product overview
Toshiba GT60N321 1000V 60A N-Channel IGBT
The Toshiba GT60N321 is a high-power silicon N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications. The marking visible on the supplied component clearly identifies it as TOSHIBA GT60N321.
According to the Toshiba datasheet, the GT60N321 is a fourth-generation high-speed IGBT rated for 1000V collector-emitter voltage and 60A continuous collector current, with an integrated fast-recovery diode (FRD) between emitter and collector.
Technical Specifications
| Manufacturer | Toshiba |
| Part Number | GT60N321 |
| Device Type | IGBT – Insulated Gate Bipolar Transistor |
| Channel Type | Silicon N-Channel |
| Collector-Emitter Voltage (VCES) | 1000V |
| Continuous Collector Current (IC) | 60A |
| Pulsed Collector Current (ICP) | 120A (1ms) |
| Gate-Emitter Voltage (VGES) | ±25V |
| Collector Power Dissipation | 170W at Tc = 25°C |
| VCE(sat) | 2.3V Typical at IC = 60A, VGE = 15V |
| Fall Time (tf) | 0.25µs Typical |
| Integrated Diode | Yes – Fast Recovery Diode (FRD) |
| FRD Reverse Recovery Time | 0.8µs Typical |
| Maximum Junction Temperature | 150°C |
| Storage Temperature | -55°C to +150°C |
| Mounting | Through-Hole |
High-Power Switching Device
With a 1000V VCES rating and 60A continuous collector-current rating, the GT60N321 is intended for high-power switching circuits. Toshiba specifies a pulsed collector-current rating of up to 120A for 1ms.
High-Speed IGBT
Toshiba specifies a typical fall time of 0.25µs at 60A. The device also has a typical collector-emitter saturation voltage of 2.3V at 60A with a 15V gate drive.
Integrated Fast-Recovery Diode
The GT60N321 incorporates an FRD between emitter and collector. Toshiba specifies a typical reverse-recovery time of 0.8µs under the datasheet test conditions.
Typical Applications
- High-Power Switching Circuits
- Industrial Power Electronics
- Inverter Circuits
- Motor Control Power Stages
- Power Conversion Equipment
- Industrial Equipment Repair
- Replacement of Matching GT60N321 Devices
Pin Configuration
The Toshiba datasheet identifies the three device terminals as Gate, Collector and Emitter. Always verify the manufacturer's package drawing and pin configuration before installation.