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Chinese
UMW 12N10 N-Channel Power MOSFET featuring a 100V drain-source rating, up to 15A continuous drain current and 114mΩ maximum RDS(on) at the specified test conditions. Supplied in a compact TO-252 / DPAK surface-mount package for power supplies, converters, switching and power-management applications.
Final pricing may vary by configuration, quantity, delivery and project requirements.
The UMW 12N10 is an N-channel enhancement-mode power MOSFET designed for power switching applications. It combines a 100V drain-source voltage rating with up to 15A continuous drain current under the manufacturer's specified test conditions.
The device is supplied in a compact TO-252 (DPAK) surface-mount package and is suitable for power supplies, switching circuits and other power-management applications requiring a 100V N-channel MOSFET.
| Brand / Manufacturer | UMW |
| Part Number | 12N10 |
| Device Type | N-Channel Power MOSFET |
| Technology | Enhancement-Mode MOSFET |
| Drain-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | 15A at TC = 25°C |
| Continuous Drain Current | 13A at TC = 125°C |
| Pulsed Drain Current (IDM) | 40A |
| Gate-Source Voltage (VGS) | ±20V |
| RDS(on) Maximum | 114mΩ at VGS = 10V, ID = 3A |
| Gate Threshold Voltage | 2.5V Maximum at 250µA |
| Maximum Power Dissipation | 96W at TC = 25°C |
| Operating Junction Temperature | -55°C to +175°C |
| Package | TO-252 / DPAK |
| Mounting Type | Surface Mount (SMD) |
The 12N10 provides a 100V drain-source rating and a continuous drain-current rating of up to 15A at a 25°C case temperature. The manufacturer also specifies a pulsed drain-current capability of 40A.
UMW specifies a maximum RDS(on) of 114mΩ with a 10V gate drive and 3A drain current. Low on-state resistance helps reduce conduction losses when the MOSFET is fully enhanced.
The surface-mount TO-252 package is designed to provide a compact PCB footprint while allowing the drain tab to transfer heat into an appropriately designed PCB copper area.